A Two-Channel Power Switch Driver with Parallel Resonance in the Gate Circuit
Abstract
The well-known scheme of a one-channel power switch driver with parallel resonance in gate circuit (PRD) is considered and its merits and demerits in comparison with the standard drivers are given. A new type of PRD drivers for control of FETs, combined and composite transistors is proposed and described. The proposed driver performs opposite-phase control of two MOSFETs with induced channels and can be used in advanced static converters of a megahertz frequency range. The two-channel PRD driver has a number of advantages over the previously proposed driver schemes. In comparison with traditional drivers it allows significantly smaller gating losses and a higher switching frequency to be achieved. In comparison with quasi-resonant circuits, the two-channel PRD opens the possibility to have a considerably lower power and cost of the semiconductor amplifier. In comparison with one- channel drivers better performance characteristics and more stable operation were obtained owing to the use of a resonant-circuit three-winding coil and mutual compensation of the nonlinearity of the transistors’ input capacitances. The above-mentioned nonlinearity is compensated due to the transistor input capacities being connected in coupled resonant circuits in an opposite-phase manner. As a result, a close to a sine wave shape of the gate voltage is obtained. The duty cycle for each switch is a little bit smaller than 0.5. The use of the proposed scheme guarantees that a dead interval of time is secured between the opening instants of switches controlled by a single driver and that the system will have high noise immunity. On the other hand, the two-channel PRD driver has certain shortcomings: it features a fixed duty cycle, a comparatively long switching time, and a noticeable influence of the power circuit parameters on the system operation. In view of these circumstances, it is recommended to use PRD drivers in megahertz frequency range resonance converters with phase and discrete control modes. The functional diagram of a bridge converter with phase control and two-channel PRD drivers is presented, and recommendations on selecting its elements are given. The proposed drivers are supposed to be used mainly for constructing compact converters with a high specific power for portable devices and for electric vehicles.
References
2. Warren J.R. Cell Modulated DC/DC Converter. Massachusetts Institute of Technology, 2005.
3. Sagneri A. Design of a Very High Frequency DC-DC Boost Converter. Massachusetts Institute of Technology, 2007.
4. Warren J.R., Rosowski K.A., Perreault D.J. Transistor Selection and Design of a VHF DC-DC Power Converter // IEEE Trans. Power Electronics. 2008. V. 23. No. 1. Pp. 27—37.
5. Pilawa-Podgurski R. e. a. Very-high-frequency Resonant Boost Converters // IEEE Trans. Industrial Electronics. 2009. V. 24. No. 6. Pp. 1654—1665.
6. Gu L. e. a. 27.12MHz GaN bi-directional Resonant Power Converter // IEEE 16th Workshop. 2015. P. 6.
7. Rivas J.M. e. a. New Architectures for RadioFrequency DC–DC Power Conversion // IEEE Trans. Industrial Electronics. 2006. V. 21. No. 2. Pp. 380—393.
8. Balogh L. Design and Application Guide for High Speed MOSFET Gate Drive Circuits [Электрон. ресурс] http://www.radio-sensors.se/download/gate-driver2.pdf (дата обращения 03.06.2016)
9. Pelly B.R. Используйте величину заряда затвора при проектировании схемы драйвера затвора мощных МОП ПТ и БТИЗ (AN-944A) // International Rectifier [Электрон. ресурс] http://irf.ru/techdoc/an-944.pdf (дата обращения 27.08.2016)
10. Cheng Z., Ling C.H. Gate-channel Capacitance Characteristics in the Fully-depleted SOI MOSFET // IEEE Trans. Electron Devices. 2001. V. 48. No. 2. Pp. 388—391.
11. Krom R.T. Gate-to-channel Parasitic Capacitance Minimization and Source-drain Leakage Evaluation in germanium PMOS. N.-Y.: Rochester Institute of Technology, 2008.
12. Rivas J.M. e. a. Design Considerations for Very High Frequency DC-DC Converters // Proc. IEEE 37th Annual Power Electronics Specialists Conf. Jeju (Korea), 2006. Pp. 2287—2297.
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Для цитирования: Смирнов Д.С. Двухканальный драйвер силовых ключей с параллельным резонансом в цепи затвора // Вестник МЭИ. 2018. № 1. С. 59—66. DOI: 10.24160/1993-6982-2018-1-59-66.
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1. Lim S., Otten D.M., Perreault D.J. New AC-DC Power Factor Correction Architecture Suitable for High Frequency Operation. IEEE PELS. 2016;31;4:2937—2949.
2. Warren J.R. Cell Modulated DC/DC Converter. Massachusetts Institute of Technology, 2005.
3. Sagneri A. Design of a Very High Frequency DC-DC Boost Converter. Massachusetts Institute of Technology, 2007.
4. Warren J.R., Rosowski K.A., Perreault D.J. Transis- tor Selection and Design of a VHF DC-DC Power Conver- ter. IEEE Trans. Power Electronics. 2008;23;1:27—37.
5. Pilawa-Podgurski R. e. a. Very-high-frequency Resonant Boost Converters. IEEE Trans. Industrial Electronics. 2009;24;6:1654—1665.
6. Gu L. e. a. 27.12MHz GaN bi-directional Resonant Power Converter. IEEE 16th Workshop. 2015:6.
7. Rivas J.M. e. a. New Architectures for Radio- Frequency DC–DC Power Conversion. IEEE Trans. Industrial Electronics. 2006;21;2:380—393.
8. Balogh L. Design and Application Guide for High Speed MOSFET Gate Drive Circuits [Elektron. Resurs] http://www.radio-sensors.se/download/gate-driver2.pdf (Data Obrashcheniya 03.06.2016)
9. Pelly B.R. Ispol'zuyte Velichinu Zaryada Zatvora pri Proektirovanii Skhemy Drayvera Zatvora Moshchnyh MOP PT i BTIZ (AN-944A). International Rectifier [Elektron. Resurs] http://irf.ru/techdoc/an-944.pdf (Data Obrashcheniya 27.08.2016) (in Russian).
10. Cheng Z., Ling C.H. Gate-channel Capacitance Characteristics in the Fully-depleted SOI MOSFET. IEEE Trans. Electron Devices. 2001;48;2:388—391.
11. Krom R.T. Gate-to-channel Parasitic Capacitance Minimization and Source-drain Leakage Evaluation in germanium PMOS. N.-Y.: Rochester Institute of Technology, 2008.
12. Rivas J.M. e. a. Design Considerations for Very High Frequency DC-DC Converters. Proc. IEEE 37th Annual Power Electronics Specialists Conf. Jeju (Korea), 2006:2287—2297.
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For citation: Smirnov D.S. A Two-Channel Power Switch Driver with Parallel Resonance in the Gate Circuit. MPEI Vestnik. 2018; 1:59—66. (in Russian). DOI: 10.24160/1993-6982-2018-1-59-66.